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 Free Download Konzepte siliziumbasierter MOS-Bauelemente By Dr.-Ing. habil. Jörg Schulze (auth.) 2005 | 429 Pages | ISBN: 3540234373 | PDF | 13 MB Unter den Konzepten für siliziumbasierte MOS-Bauelemente finden sich neben dem klassischen Lateralkonzept Vertikal- und Quasivertikalkonzepte. Das Buch widmet sich der Erörterung der (quasi)vertikalen MOS-Bauelementkonzepte für Logikanwendungen (CMOS), Speicheranwendungen (DRAM, SRAM, EEPROM) und leistungselektronische Anwendungen. Der Autor stützt sich auf ein umfängliches Quellenmaterial, das in den vergangenen 30 Jahren diskutiert wurde. Er beschreibt, wie die einzelnen Konzepte technologisch umgesetzt wurden und geht auf die Vor- und Nachteile der Konzepte ein. Er erläutert die Funktionsweise und Charakteristiken der elektronischen Bauelemente, die mit dem jeweiligen Konzept realisiert wurden, und untersucht die Relevanz, die (quasi)vertikale Konzepte für die siliziumbasierte MOS-Technologie erlangen können.Das Buch ist besonders geeignet für Ingenieure und Physiker, die sich mit neuartigen bzw. alternativen Bauelementarchitekturen und deren Entwicklung beschäftigen.
 Free Download MOS Switched-Capacitor and Continuous-Time Integrated Circuits and Systems: Analysis and Design by Rolf Unbehauen , Andrzej Cichocki English | PDF | 1989 | 645 Pages | ISBN : 3642836798 | 54.7 MB The purpose of this book is to present analysis and design principles, procedures and techniques of analog integrated circuits which are to be implemented in MOS (metal oxide semiconductor) technology. MOS technology is becoming dominant in the realization of digital systems, and its use for analog circuits opens new pos sibilities for the design of complex mixed analog/digital VLSI (very large scale in tegration) chips. Although we are focusing attention in this book principally on circuits and systems which can be implemented in CMOS technology, many con siderations and structures are of a general nature and can be adapted to other promising and emerging technologies, namely GaAs (Gallium Arsenide) and BI MOS (bipolar MOS, i. e. circuits which combine both bipolar and CMOS devices) technology. Moreover, some of the structures and circuits described in this book can also be useful without integration. In this book we describe two large classes of analog integrated circuits: * switched capacitor (SC) networks, * continuous-time CMOS (unswitched) circuits. SC networks are sampled-data systems in which electric charges are transferred from one point to another at regular discrete intervals of time and thus the signal samples are stored and processed. Other circuits belonging to this class of sampled-data systems are charge transfer devices (CTD) and charge coupled dev ices (CCD). In contrast to SC circuits, continuous-time CMOS circuits operate continuously in time. They can be considered as subcircuits or building blocks (e. g.  Free Download Advanced MOS Devices and Their Circuit Applications by Beohar, Ankur;Mathew, Ribu;Upadhyay, Abhishek Kumar;Vishvakarma, Santosh Kumar;, Ribu Mathew, Abhishek Kumar Upadhyay, Santosh Kumar Vishvakarma English | 2023 | ISBN: 1032392851 | 161 pages | True PDF EPUB | 49.65 MB  Free Download MOS EXCEL EXPERT 77–728 Exam Preparation Last updated 7/2023 Duration: 1h 18m | Video: .MP4, 1280x720 30 fps | Audio: AAC, 48 kHz, 2ch | Size: 793 MB Genre: eLearning | Language: English Ultimate Microsoft Office Specialist (MOS) test preparation training course  Free Download Electronic Devices – MOS Capacitor Published 7/2023 Created by ANUMULA ANVESH MP4 | Video: h264, 1280x720 | Audio: AAC, 44.1 KHz, 2 Ch Genre: eLearning | Language: English | Duration: 8 Lectures ( 1h 59m ) | Size: 2.41 GB  Free Download Switch-Level Timing Simulation of MOS VLSI Circuits by Vasant B. Rao , David V. Overhauser , Timothy N. Trick , Ibrahim N. Hajj English | PDF | 1989 | 218 Pages | ISBN : 0898383021 | 18.9 MB  Model and Design of Bipolar and MOS Current-Mode Logic: CML, ECL and SCL Digital Circuits by Massimo Alioto English | PDF | 2005 | 329 Pages | ISBN : 1402028784 | 16.1 MB Current-Mode digital circuits have been extensively analyzed and used since the early days of digital ICs. In particular, bipolar Current-Mode digital circuits emerged as an approach to realize digital circuits with the highest speed. Together with its speed performance, CMOS Current-Mode logic has been rediscovered to allow logic gates implementations which, in contrast to classical VLSI CMOS digital circuits, have the feature of low noise level generation. Thus, CMOS Current-Mode gates can be efficiently used inside analog and mixed-signal ICs, which require a low noise silicon environment. For these reasons, until today, many works and results have been published which reinforce the importance of Current-Mode digital circuits. In the topic of Current-Mode digital circuits, the authors spent a lot of effort in the last six years, and their original results highly enhanced both the modeling and the related design methodologies.  MP4 | Video: h264, 1280x720 | Audio: AAC, 44.1 KHz Language: English | Size: 1.35 GB | Duration: 2h 23m One week to master the Excel skills needed for your 2019 MOS Excel Expert exam. Practice exam included.  MP4 | Video: h264, 1280x720 | Audio: AAC, 44.1 KHz Language: English | Size: 1.76 GB | Duration: 2h 55m One week to master the Excel skills needed for your Microsoft certification, 77-727 Excel exam. Practice exam included.  English | 2021 | ISBN: 1032106271 | 174 pages | True PDF | 15.73 MB The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure. This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability. |
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